Quick annealing furnace

Product Introduction:

REAL RTP100The Type Rapid Annealing Furnace is from South KoreaULTECHA company's product4The inch fast annealing furnace adopts innovative heating technology, which can achieve true substrate temperature measurement without the need for temperature compensation of traditional fast annealing furnaces. The temperature control is precise and the temperature repeatability is high. Its customers include many semiconductor companies and research teams internationally, making it an ideal choice for semiconductor process annealing technology.

n Technical features:

-Real substrate temperature measurement without traditional temperature compensation

-Infrared halogen tube lamp heating

-Extremely excellent heating temperature accuracy and uniformity

-Fast numbersPIDtemperature control

-Stainless steel cold wall vacuum chamber

-Good system stability

-Compact structure, small desktop system

-Equipped with a touch screenPCcontrol

-Compatible with atmospheric and vacuum environments, with a standard vacuum degree value of5x10-3TorrUsing a two-stage molecular pump, the vacuum degree is as low as5x10-6Torr

-3Road gas（MFCControl)

-No cross contamination, no metal contamination

n Technical Introduction:

As shown in the figure above, the heat radiated by the array halogen lamp reaches the surface of the sample through the quartz window, and the sample is heated. Traditional rapid annealing furnaces use thermocouples to measure the substrate temperature. Due to the distance between the thermocouple and the substrate, the measured temperature is not the true temperature of the substrate, and temperature compensation is necessary.

REAL RTP100The type of rapid annealing furnace adopts a dedicated sheet-like structureReal T/C KITPerform temperature measurement, as shown in the figure above, using a thermocouple thermometer and a sheet-like thermometerReal T/C KITConnected, in sheet form during operationReal T/C KITLocated very close above the sample, the array halogen lamp radiates heat through the quartz window to reach the surface of the sample, and the sample is heated into a sheet shapeReal T/C KITSimultaneously heated, due to the substrate andReal T/C KITVery close, they also transfer heat between each other and quickly reach thermal equilibrium, so they are sheet-likeReal T/C KITThe measured temperature is infinitely close to the true temperature of the substrate, thus achieving a true measurement of the substrate temperature.

n Main technical parameters:

-Substrate size:4inch

-Substrate base: Quartz needle (optional)SiCCoated graphite

-Temperature range:150-1250℃

-Heating rate:10-200℃/S

-Temperature uniformity:≤±1.5% (@800℃, Silicon wafer)

≤±1.0% (@800℃, Substrate on SiC coated graphite susceptor)

-Temperature control accuracy:≤ ±3℃

-Temperature repeatability:≤ ±3℃

-真空度：5.0E-3 Torr / 5.0E-6 Torr

-Gas supply: standard1roadN2Blowing and cooling air path, byMFCControl (optional at most)3Road)

-Annealing duration:≥ 35min@1250 ℃

-Temperature control: fast digitalPIDcontrol

-Size:870mm*650mm*620mm

nSubstrate type:

-Silicon waferssilicon wafer

-Compound semiconductor wafersCompound semiconductor substrate

-GaN/Sapphire wafers for LEDsforLEDofGaN/Sapphire substrate

-Silicon carbide wafersSilicon carbide substrate

-Poly silicon wafers for solar cellsPolycrystalline silicon substrate for solar cells

-Glass substratesGlass substrate

-Metalsmetal

-Polymerspolymer

-Graphite and silicon carbide susceptorsGraphite and silicon carbide coated graphite base

nApplication fields:

ion implantation/Contact annealing, rapid heat treatment(RTP), rapid annealing(RTA)Rapid thermal oxidation(RTO)Rapid thermal nitriding(RTN)It can be used in different environments such as vacuum, inert atmosphere, oxygen, hydrogen, mixed gas, etc,SiAu, SiAl, SiMoAlloying, low dielectric materials, crystallization, densification, solar cell bonding, etc.