Plasma enhanced chemical vapor deposition system

Plasma enhanced chemical vapor deposition system

PECVD: It uses microwave or radio frequency to ionize a gas containing atoms that make up a thin film, forming a plasma locally. The plasma has strong chemical activity and is easily reactive, depositing the desired thin film on the substrate. In order to facilitate chemical reactions at lower temperatures, the activity of plasma is utilized to promote the reaction, hence this type of CVD is called plasma enhanced chemical vapor deposition (PECVD)
Our company provides high-quality PECVD to meet different research and production needs according to the different application requirements of our customers.
Our PECVD system can deposit high-quality SiO2 films, Si3N4 films, diamond-like carbon films, hard films, optical films, etc. The sedimentation size is 12 inches.
Usually, radio frequency shower sources (RF) or hollow cathode RF plasma sources with irregular gas distribution are used as reaction sources to generate equimolar particles.
Partial PECVD can be upgraded to a dual function system of PECVD and reactive ion etching (with ICP source).

System parameters:
Ultimate vacuum degree of the cavity: 10-7 torr;
Particle sources: Radio frequency shower source (RF), hollow cathode density plasma source (HCD), inductively coupled plasma source (ICP) or microwave plasma source, VHF (very high frequency) power supply
Lining diameter: 12 "(300 mm) diameter
Substrate holder with RF bias voltage;
Heating temperature: 800 ° C;
Up to 8 MFC channels and diverse gas options;
Uniformity: ≤± 3%;
Pre vacuum chamber and automatic chip loading and unloading door;
Fully automatic control;

Application fields:
Plasma induced surface modification;
Plasma cleaning;
Plasma polymerization;
SiO2, Si3N4, DLC and other thin films;
Selective growth of carbon nanotubes (CNTs).