Plasma enhanced atomic layer deposition system

Plasma enhanced atomic layer deposition system
（PEALD)
Plasma Enhanced Atomic Layer Deposition (PEALD), also known as Atomic Layer Epitaxy (ALE), or Atomic Layer Chemical Vapor Deposition (ALCVD). Atomic layer deposition is the continuous introduction of at least two gas-phase precursor sources on a heated substrate, and the chemical adsorption automatically terminates when the surface saturates. The appropriate process temperature hinders the physical adsorption of molecules on the surface. A basic atomic layer deposition cycle consists of four steps: pulse A, cleaning A, pulse B, and cleaning B. The deposition cycle is repeated continuously until the desired film thickness is obtained, which is a tool for making nanostructures and forming nanodevices.

The advantages of PEALD include:
1. The thickness of the thin film can be precisely controlled by controlling the number of reaction cycles, thereby achieving atomic layer thickness accuracy in the thin film;
2. Due to the saturated chemical adsorption of the precursor, it ensures the generation of large-area uniform thin films;
3. A three-dimensional conformal stoichiometric thin film can be generated as a coating for step coverage and nanoporous materials;
4. It can deposit multi-component nano thin layers and mixed oxides;
5. Thin film growth can be carried out at low temperatures (room temperature to below 400 degrees);
6. Widely applicable to substrates of various shapes;
7. Metal oxide films grown by atomic layer deposition can be used as gate dielectrics, electroluminescent display insulators, capacitor dielectrics, and MEMS devices. The grown metal nitride films are suitable for diffusion barriers.


Application of Plasma Enhanced Atomic Layer Deposition (PEALD):
1) High-K dielectric materials (Al2O3, HfO2, ZrO2, PrAlO, Ta2O5, La2O3);
2) Conductive gate electrodes (Ir, Pt, Ru, TiN);
3) Metal interconnect structures (Cu, WN, TaN, Ru, Ir);
4) Catalytic materials (Pt, Ir, Co, TiO2, V2O5);
5) Nanostructured (All ALD Material);
6) Biomedical coatings (TiN, ZrN, TiAlN, AlTiN);
7) ALD 金属 (Ru, Pd, Ir, Pt, Rh, Co, Cu, Fe, Ni)；
8) Piezoelectric layer (ZnO, AlN, ZnS);
9) Transparent electrical conductor (ZnO: Al, ITO);
10) UV blocking layer (ZnO, TiO2);
11) OLED passivation layer (Al2O3);
12) 光子晶体 (ZnO, ZnS:Mn, TiO2, Ta3N5);
13) Anti reflection filter (Al2O3, ZnS, SnO2, Ta2O5);
14) Electroluminescent devices (SrS: Cu, ZnS: Mn, ZnS: Tb, SrS: Ce);
15) Process layers such as etching barriers, ion diffusion barriers, etc. (Al2O3, ZrO2);
16) Optical applications such as solar cells, lasers, optical coatings, nanophotonics, etc. (AlTiO, SnO2, ZnO);
17) Sensors (SnO2, Ta2O5);
18) Wear lubricant, corrosion barrier layer (Al2O3, ZrO2, WS2);


System configuration:
Substrate size: 6 inches, 8 inches, 12 inches;
Heating temperature: 25 ℃ -400 ℃ (optional higher);
Uniformity:<2%;
Number of precursors: 4 (optional 6);
Compatibility: Compatible with Class 100 cleanrooms;
Size: 950mm x 700mm;
ALD and PE-ALD technologies;
The materials that can currently be deposited include:
1） 氧化物: Al2O3, TiO2, Ta2O5, ZrO2, HfO2, SnO2, ZnO, La2O3, V2O5, SiO2,. ..
2) Nitrides: AlN, TaNx, NbN, TiN, MoN, ZrN, HfN, GaN
3) Fluorides: CaF2, SrF2, ZnF2
4） 金属: Pt, Ru, Ir, Pd, Cu, Fe, Co, Ni, . ..
5) Carbides: TiC, NbC, TaC
6) Composite structural materials: AlTiNx, AlTiOx, AlHfOx, SiO2: Al, HfSiOx
7) Sulfides: ZnS, SrS, CaS, PbS