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Kerui Equipment Co., Ltd

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    1617579497@qq.com

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    13916855175

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    Room 902, No. 3 Baiyulan Environmental Protection Plaza, Lane 251, Songhuajiang Road, Yangpu District, Shanghai

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Metal organic compound chemical vapor deposition

NegotiableUpdate on 01/22
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Product Description: Metal Organic Compound Chemical Vapor Deposition Online Ordering

Product Details

Metal organic compound chemical vapor deposition (MOCVD)
We provide a complete set of MOCVD products, including desktop research and development type, pilot type, and production type. The design of its reactor can be easily upgraded to meet the needs of large-diameter chip production according to the process requirements. We can also design for customers to meet their special process and application needs. The system components include: reactor, gas transmission system, electrical control system, and exhaust gas treatment system
Application directions: oxides, nitrides, carbides, chalcogenides, semiconductors, etc.
Provide reactors suitable for different material research needs:
Transparent conductor oxide (TCO) is applied in LCD, solar cells, transparent heaters, electrodes, LED, OLED and other fields, including P-type ZnO, ITO, SrCuO, MgAlO, SrRuOm and other MOCVD systems;
MEMS&MOEMs include MOCVD systems such as PZT, ZrO, NbO, LiNbO, TiO2, SiO2, PbMgO, CMO, Ta2O5, etc;
Storage (DRAM&NVRAM) dielectric/passivation materials are applied to gate, dielectric layer, ferroelectric, high-frequency devices, passivation, protective layer, etc., including: BST, PZT, SBT, CMO, BLT, Hf (Si) O, Ta2O5, Zr (Si) O, Al2O3, MgO and other MOCVD systems;
Waveguides, optoelectronics, WDMs, MOEMS and other materials, including: YBCO, PZT, ZnO, ZnSiO: Mn, GaN, SiC, Al, W, Cn and other MOCVD systems;
Other materials such as superconductors, nitrides, oxides, magnetic materials, including YBCO, PZT, ZnO, ZnSiO: Mn, GaN, SiC, Al, W, Cn and other MOCVD systems;
金属及合金, 氧化物, 氮化物, III-V, II-VI,. ..;
Semiconductors: SiO2, HfO2, Ta2O5, Cu, TiN, TaN;
Nitrides and alloys: GaN, AlN, GaAs, GaAsN;
High dielectric materials: SrTiO3, BaTiO3, Ba (1-x) SrxTiO3 (BST);
Ferroelectric materials: SBT, SBTN, PLZT, PZT;
Superconducting materials: YBCO, Bi-2223, Bi-2212, Tl-1223;
Piezoelectric materials: (Pb, Sr) (Zr, Ti) O3, modified lead titanate ..;
Metals: Pt, Cu;
Giant magnetoresistance materials ..;
Thermal coating, barrier layer, mechanical coating, optical materials .


We provide solutions ranging from desktop reactors (for research and improvement needs) to automated production systems. Due to the adaptability of material changes and considerations of economic price, desktop reactors are the most suitable choice for any researcher and are also easily upgraded to mass production models.
Research oriented MOCVD equipment, including liquid direct injection ALD process, completes deposition and annealing in the same chamber.
-Lower equipment and usage costs, less precursor source usage, smaller cavity size, and higher film deposition quality!
-Very suitable for scientific research in universities and research institutes!
Instrument parameters:
1/1-4 inch MOCVD system;
2/Designed specifically to meet the needs of scientific research institutions;
3/The MOCVD system can deposit oxide, nitride, metal, III-V, and II-VI film layers on solid and liquid organic metal sources using MOCVD on different substrates;
4/MOCVD is equipped with a precursor direct processing unit, which can use MO sources on a large scale for the research and preparation of epitaxial materials;
The infrared lamp heating system in the MOCVD chamber can achieve online annealing process;
Performance and features:
1. Temperature range: from room temperature to 1200 ° C;
2. Gas mixing performance with mass flow controller;
3. Vacuum range:~10-3 Torr, optional high vacuum;
4. Optional glove box;
5. Widely accepted by customers
6. Durable and sturdy
7. High reliability
8. Good repeatability
9. Economically applicable