To meet the advantages of high power damage threshold, low voltage electrical effect, and low insertion loss, a BPR line for Pockels batteries based on BBO has been specially designed. Operated by IPO's fast switching electronic driver, the BPR equipment provides top-notch industrial laser reliability and performance for high-power and high pulse repetition rate lasers, with wavelengths ranging from 190 Nm to 2.2 μ m.
Our BPR devices rely on the Pockels effect, including single crystal and twin crystal designs, making them practical for applications such as Q-switching, pulse picking, and cavity tilting. In order to compensate for the low electro-optic coefficient of BBO, especially the high voltage requirements for large apertures (>3.6mm), our twin crystal design has half the switching voltage, which is beneficial for accelerating the switching frequency and repetition rate.
The specifications are as follows:
|
Model
|
BPR 320-S |
BPR320-D |
BPR 420-S |
BPR420-D |
BPR 620-D |
| Clear aperture D, mm |
2.6 |
3.6 |
5.6 |
| Number of crystals |
1 |
2 |
1 |
2 |
2 |
| Crystal size, mm |
3x3x20 |
4x4x20 |
6x6x20 |
| 1/4 voltage @ 1064 nm, kV |
3600 |
1800 |
4800 |
2400 |
3800 |
| extinction ratio |
1000:1 |
500:1 |
1000:1 |
500:1 |
500:1 |
| Transmission rate,% |
>99 |
| capacitance, PF |
4 |
| Power maintenance, W |
50W |
features:
Great inhibition of Piezo effect
High transmission rate, low insertion loss
Broadband operating wavelength (190 nm~2.2 μ m)
High damage threshold (i.e.:@ 1064 nm,0.5GW/cm2,10 ns; 50 GW/cm2,1ps; 200 GW/cm2,100 fs)
The structure is reliable, with a power of up to 100 W and a high voltage pulse repetition frequency of up to 2 MHz.
Low thermal lensing effect and thermally induced polarization phenomenon.
Application:
Suitable for high repetition rate Q-switching. Pulse coupling applications of picosecond and femtosecond regenerative amplifiers for pulse picking and optical switching.