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Address
Room 703, No. 1228 Zhenguang Road, Putuo District, Shanghai
Shanghai Yucheng Optoelectronics Technology Co., Ltd
Room 703, No. 1228 Zhenguang Road, Putuo District, Shanghai
DFBandDBR laser
High power 1550nm DFB laser

Main features:
Application:
Optoelectronic characteristics:
TOP=25°C, continous wave and beginning of life unless otherwise specified.
|
Parameter |
Sym. |
Condition |
Min |
Typ. |
Max |
Unit |
|
Working chip temperature |
TCHIP |
|
20 |
|
35 |
°C |
|
threshold current |
ITH |
|
|
50 |
|
mA |
|
Laser driving current |
IOP |
|
|
375 |
500 |
mA |
|
Laser forward voltage |
VF |
I= IMAX |
|
|
3 |
V |
|
output power |
POP |
100mW Version, I=IOP |
100 |
|
|
mW |
|
80mW Version, I=IOP |
80 |
|
|
|||
|
63mW Version, I=IOP |
63 |
|
|
|||
|
50mW Version, I=IOP |
50 |
|
|
|||
|
40mW Version, I=IOP |
40 |
|
|
|||
|
center frequency |
FOPT |
P=POP |
See ordering information |
THz |
||
|
line width |
Δν |
|
|
1 |
|
MHz |
|
relative intensity noise |
RIN |
P=POP, 0.2GHz→14GHz |
|
|
-150 |
dB/Hz |
|
Side Mode Suppression Ratio |
SMSR |
P=POP |
30 |
|
|
dB |
|
optical isolation |
ISO |
|
30 |
35 |
|
dB |
|
extinction ratio |
PER |
|
17 |
21 |
|
dB |
|
Monitor the current of the photodiode |
IPD |
|
100 |
|
|
µA |
|
Monitor the dark current of photodiodes |
ID |
|
|
|
100 |
nA |
|
Tracking Error |
|
|
-0.5 |
|
0.5 |
dB |
|
TEC current |
|
TOP=70°C, P=POP, TCHIP=25°C |
|
|
4.0 |
A |
|
TEC voltage |
|
TOP=70°C, P=POP, TCHIP=25°C |
|
|
4.0 |
V |
|
Thermistor impedance |
RTH |
T=25°C |
9500 |
10000 |
10500 |
Ω |
|
Thermistor beta coefficient |
β |
0 / 50°C |
|
3892 |
|
|
High bandwidth DFB laser

Main features:
Optoelectronic characteristics:
TOP=25°C, continous wave and beginning of life unless otherwise specified.
|
Parameter |
Sym. |
Condition |
Min |
Typ. |
Max |
Unit |
|
Working chip temperature |
TCHIP |
|
15 |
|
35 |
°C |
|
threshold current |
ITH |
|
8 |
|
20 |
mA |
|
Laser driving current |
IOP |
|
|
75 |
100 |
mA |
|
Laser forward voltage |
VF |
I= IMAX |
|
1.6 |
2 |
V |
|
output power |
POP |
I=IOP |
18 |
|
|
mW |
|
Center wavelength |
λ |
P=POP |
|
1310 |
|
nm |
|
line width |
Δ ν |
|
|
1 |
|
MHz |
|
relative intensity noise |
RIN |
P=POP, 0.2GHz→3GHz |
|
|
-150 |
dB/Hz |
|
Side Mode Suppression Ratio |
SMSR |
P=POP |
30 |
|
|
dB |
|
optical isolation |
ISO |
|
30 |
35 |
|
dB |
|
extinction ratio |
PER |
|
17 |
19 |
|
dB |
|
Monitor the current of the photodiode |
IPD |
|
50 |
|
|
µA |
|
Monitor the dark current of photodiodes |
ID |
|
|
|
100 |
nA |
|
Tracking Error |
|
|
-0.5 |
|
0.5 |
dB |
|
TEC current |
|
TOP=70°C, P=POP, TCHIP=25°C |
|
|
2.0 |
A |
|
TEC voltage |
|
TOP=70°C, P=POP, TCHIP=25°C |
|
|
2.5 |
V |
|
Thermistor impedance |
RTH |
T=25°C |
9500 |
10000 |
10500 |
Ω |
|
Thermistor beta coefficient |
β |
0 / 50°C |
|
3892 |
|
|
1064nm DBR laser
Main features:
Application:
Optoelectronic characteristics:
TOP=25°C, continous wave and beginning of life unless otherwise specified.
|
Parameter |
Sym. |
Condition |
Min |
Typ. |
Max |
Unit |
|
Working chip temperature |
TCHIP |
|
15 |
|
35 |
°C |
|
threshold current |
ITH |
|
|
40 |
50 |
mA |
|
Laser driving current |
IOP |
|
|
500 |
550 |
mA |
|
Laser forward voltage |
VF |
I= IMAX |
|
2.0 |
2.5 |
V |
|
output power |
POP |
I=IOP |
|
150 |
|
mW |
|
Center wavelength |
λ |
P=POP |
1062 |
1064 |
1066 |
nm |
|
line width |
Δ ν |
|
|
8 |
10 |
MHz |
|
Side Mode Suppression Ratio |
SMSR |
P=POP |
-30 |
|
|
dB |
|
extinction ratio |
PER |
|
14 |
19 |
|
dB |
|
Monitor the current of the photodiode |
IPD |
P=POP |
50 |
|
|
µA |
|
Monitor the dark current of photodiodes |
ID |
|
|
|
100 |
nA |
|
TEC current |
|
ΔT=25°C, P=POP |
|
|
3.5 |
A |
|
TEC voltage |
|
ΔT=25°C, P=POP |
|
|
3.5 |
V |
|
Thermistor impedance |
RTH |
T=25°C |
9500 |
10000 |
10500 |
Ω |
|
Thermistor beta coefficient |
β |
0 / 50°C |
|
3892 |
|
|
1064 nm high-power DFB Laser
Main features:
Application:
Optoelectronic characteristics:
TOP=25°C, continous wave and beginning of life unless otherwise specified.
|
Parameter |
Sym. |
Condition |
Min |
Typ. |
Max |
Unit |
|
Working chip temperature |
TCHIP |
|
20 |
|
40 |
°C |
|
threshold current |
ITH |
|
|
17 |
|
mA |
|
Laser driving current |
IOP |
|
|
|
400 |
mA |
|
Laser forward voltage |
VF |
I= IMAX |
|
|
3 |
V |
|
output power |
POP |
I=IOP |
50 |
|
|
mW |
|
Center wavelength |
λ |
P=POP |
1062 |
1064 |
1066 |
nm |
|
line width |
Δ ν |
|
|
|
0.1 |
nm |
|
Side Mode Suppression Ratio |
SMSR |
P=POP |
40 |
|
|
dB |
|
extinction ratio |
PER |
|
17 |
21 |
|
dB |
|
Monitor the current of the photodiode |
IPD |
P=POP |
100 |
|
|
µA |
|
Monitor the dark current of photodiodes |
ID |
|
|
|
100 |
nA |
|
TEC current |
|
ΔT=25°C, P=POP |
|
|
3 |
A |
|
TEC voltage |
|
ΔT=25°C, P=POP |
|
|
3 |
V |
|
Thermistor impedance |
RTH |
T=25°C |
9500 |
10000 |
10500 |
Ω |
|
Thermistor beta coefficient |
β |
0 / 50°C |
|
3892 |
|
|